Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

被引：648
|
作者：
Hoex, B. [1 ]
Heil, S. B. S. [1 ]
Langereis, E. [1 ]
van de Sanden, M. C. M. [1 ]
Kessels, W. M. M. [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期
关键词：
D O I：
10.1063/1.2240736
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13 cm/s on low resistivity n- and p-type c-Si, respectively. These results obtained for similar to 30 nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7 nm thin Al2O3 film still yields an effective surface recombination velocity of 5 cm/s on n-type silicon.
引用
收藏
页数：3
相关论文
共 50 条
  • [11] Surface passivation of phosphorus-diffused n+-type emitters by plasma-assisted atomic-layer deposited Al2O3
    Hoex, B.
    van de Sanden, M. C. M.
    Schmidt, J.
    Brendel, R.
    Kessels, W. M. M.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2012, 6 (01): : 4 - 6
  • [12] Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
    魏海英
    郭红革
    桑利军
    李兴存
    陈强
    Plasma Science and Technology, 2018, 20 (06) : 129 - 137
  • [13] Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources
    Wei, Haiying
    Guo, Hongge
    Sang, Lijun
    Li, Xingcun
    Chen, Qiang
    PLASMA SCIENCE & TECHNOLOGY, 2018, 20 (06)
  • [14] Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
    Terlinden, N. M.
    Dingemans, G.
    de Sanden, M. C. M. van
    Kessels, W. M. M.
    APPLIED PHYSICS LETTERS, 2010, 96 (11)
  • [15] In situ reaction mechanism studies of plasma-assisted atomic layer deposition of Al2O3
    Heil, S. B. S.
    Kudlacek, P.
    Langereis, E.
    Engeln, R.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    APPLIED PHYSICS LETTERS, 2006, 89 (13)
  • [16] Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymers
    Langereis, E.
    Creatore, M.
    Heil, S. B. S.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    APPLIED PHYSICS LETTERS, 2006, 89 (08)
  • [17] Silicon surface passivation by atomic layer deposited Al2O3
    Hoex, B.
    Schmidt, J.
    Pohl, P.
    van de Sanden, M. C. M.
    Kessels, W. M. M.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (04)
  • [18] A Study of Blister Control of Al2O3 Thin Film Deposited by Plasma-assisted Atomic Layer Deposition after Firing Process
    Kang, Min Gu
    Lee, Jeong In
    Song, Hee-Eun
    Jeong, Myeong Sang
    Jeong, Kyung Taek
    Chang, Hyo Sik
    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2017, : 356 - 358
  • [19] Surface recombination of crystalline silicon substrates passivated by atomic-layer-deposited AlOx
    School of Engineering, University of Hyogo, Himeji, Hyogo 671-2280, Japan
    不详
    不详
    不详
    Jpn. J. Appl. Phys., 4 PART 2
  • [20] Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics
    Xie, Xianzong
    Rieth, Loren
    Merugu, Srinivas
    Tathireddy, Prashant
    Solzbacher, Florian
    APPLIED PHYSICS LETTERS, 2012, 101 (09)
12345