Mechanical properties and Cd-free buffer layer for CIGS solar cell

被引：0
|
作者：
Fang, Te-Hua [1 ]
Hsiao, Yu-Jen [2 ]
Lu, Chung-Hsin [3 ]
机构：
[1] Natl Kaohsiung Univ Appl Sci, Dept Mech Engn, Kaohsiung 807, Taiwan
[2] Natl Nano Device Labs, Tainan, Taiwan
[3] Natl Taiwan Univ, Dept Chem Engn, Taipei, Taiwan
来源：
INNOVATION, COMMUNICATION AND ENGINEERING | 2014年
关键词：
CIGS; Young's modulus; solar cells;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nano-structured CuIn1-xGaxSe2 heterojunction solar cells fabricated on glass are studied. About 100 nm-thick ZnS buffer layer was deposited on CIGS film by chemical bath deposition, and it generate an open circuit voltage of 0.540 V, a current density of 31 mA/cm(2), a fill factor of 61% and an efficiency of 9.5% with Cd-free green processing. In addition, the CIGS films had a maximum roughest surface morphology at 200 degrees C. the hardness and Young's modulus decreased with increasing annealing temperature at 400 degrees C.
引用
收藏
页码：111 / 113
页数：3
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