Selective nucleation and band-gap widening of LiNbO3 nanocrystals on an α-Al2O3 substrate

被引:1
|
作者
Lee, GH [1 ]
机构
[1] Dongeui Univ, Dept Informat Mat Engn, Pusan 614714, South Korea
关键词
D O I
10.1111/j.1551-2916.2004.01053.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Selective nucleation of LiNbO3 nanocrystals on the steps was observed during the initial stage of LiNbO3 film growth in an alpha-Al2O3 (0001) substrate with a multiatomic step structure. In addition, stress stored in the nanocrystals as a result of the different thermal expansion coefficients of the film and the substrate caused band-gap widening. As the size of the nanocrystals decreased, the band gap shifted to a higher energy.
引用
收藏
页码:1053 / 1055
页数:3
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