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Graphene adlayer growth between nonepitaxial graphene and the Ni(111) substrate: a theoretical study
被引:6
|作者:
Meng, Lijuan
[1
]
Lu, Jinlian
[1
]
Bai, Yujie
[1
]
Liu, Lili
[2
]
Tang, Jingyi
[3
]
Zhang, Xiuyun
[3
,4
]
机构:
[1] Yancheng Inst Technol, Dept Phys, Yancheng 224051, Jiangsu, Peoples R China
[2] Beijing Technol & Business Univ, Coll Chem & Mat Engn, Dept Chem, Beijing 100048, Peoples R China
[3] Yangzhou Univ, Coll Phys Sci & Technol, Yangzhou 225002, Jiangsu, Peoples R China
[4] Qingdao Univ Sci & Technol, Shandong Key Lab Biochem Anal, Coll Chem & Mol Engn, Qingdao 266042, Peoples R China
基金:
中国国家自然科学基金;
关键词:
TWISTED BILAYER GRAPHENE;
VAPOR-DEPOSITION GROWTH;
MOLECULAR-DYNAMICS;
SIMULATION;
BANDGAP;
STATES;
CVD;
D O I:
10.1039/d0cp04667a
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Understanding the fundamentals of chemical vapor deposition bilayer graphene growth is crucial for its synthesis. By employing density functional theory calculations and classical molecular dynamics simulations, we have investigated the evolution of carbon structures and the kinetics of the adlayer graphene nucleation between the graphene top layer (GTL) and the Ni(111) substrate. Compared to the epitaxial GTL, the weaker interaction between the nonepitaxial GTL and the Ni(111) substrate makes the nucleation of the adlayer more favorable. Furthermore, the defects involving in the adlayer graphene are easier to be healed by adopting the nonepitaxial GTL. Our results agree well with the experimental observation and demonstrate that the adlayer graphene with a high quality can be grown underneath the nonepitaxial GTL on Ni-like substrates.
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页码:2222 / 2228
页数:7
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