Graphene monolayer rotation on Ni(111) facilitates bilayer graphene growth

被引:55
|
作者
Dahal, Arjun [1 ]
Addou, Rafik [1 ]
Sutter, Peter [2 ]
Batzill, Matthias [1 ]
机构
[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
[2] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA
基金
美国国家科学基金会;
关键词
ELECTRONIC-STRUCTURE; EPITAXIAL GRAPHENE; SURFACE; SPECTROSCOPY; TRANSITION; GRAPHITE;
D O I
10.1063/1.4729150
中图分类号
O59 [应用物理学];
学科分类号
摘要
Synthesis of bilayer graphene by chemical vapor deposition is of importance for graphene-based field effect devices. Here, we demonstrate that bilayer graphene preferentially grows by carbon-segregation under graphene sheets that are rotated relative to a Ni(111) substrate. Rotated graphene monolayer films can be synthesized at growth temperatures above 650 degrees C on a Ni(111) thin-film. The segregated second graphene layer is in registry with the Ni(111) substrate and this suppresses further C-segregation, effectively self-limiting graphene formation to two layers. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729150]
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页数:4
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