Annealing behaviors of vacancy in varied neutron irradiated Czochralski silicon

The difference of annealing behaviors of vacancy-oxygen complex (VO) in varied dose neutron irradiated Czochralski silicon: (S1 5 x 10(17) n/cm(3) and S2 1.07 x 10(19) n/cm(3)) were studied. The results show that the VO is one of the main defects formed in neutron irradiated Czochralski silicon (CZ-Si). In this defect, oxygen atom shares a vacancy, it is bonded to two silicon neighbors. Annealed at 200 degrees C, divacancies are trapped by interstitial oxygen(O-i) to form V2O (840 cm 1). With the decrease of the 829 cm(-1) (VO) three infrared absorption bands at 825 cm(-1) (V2O2), 834 cm(-1) (V2O3) and 840 cm(-1) (V2O) will rise after annealed at temperature range of 200-500 degrees C. After annealed at 450-500 degrees C the main absorption bands in SI sample are 834 cm(-1), 825 cm(-1) and 889 cm(-1) (VO2), in S2 is 825 cm(-1). Annealing of A-center in varied neutron irradiated CZ-Si is suggested to consist of two processes. The first is due to trapping of VO by Oi in low dose neutron irradiated CZ-Si (S1) and the second is due to capture the wandering vacancy by VO, etc, in high dose neutron irradiated CZ-Si (S2), the VO2 plays an important role in the annealing of A-center. With the increase of the irradiation dose, the annealing behavior of A-center is changed.