Effects of antimony diffusion into porous silicon light emitting diodes

被引：2
|
作者：
Nishimura, K
Nagao, Y
Ikeda, N
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 6A期
关键词：
porous silicon; light emitting diode; postanodical Sb diffusion;
D O I：
10.1143/JJAP.36.L643
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Porous silicon (PS) light emitting diodes (LEDs) consisting of n-PS/p-PS/p-Si or n-PS/p-Si structures fabricated by postanodical Sb diffusion were characterized for assessment of the effect of Sb diffusion upon PS-LED characteristics. The homogeneity of electrical characteristics of PS-LEDs was improved by Sb diffusion. Consequently, the average series resistance of the Sb-diffused PS-LEDs was found to be lower than that of nondiffused PS-LEDs. The average external quantum efficiency of the PS-LEDs was also enhanced by Sb diffusion. The experimental results ii-ere discussed.
引用
收藏
页码：L643 / L646
页数：4
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