Preparation of CuInSe2 thin films by the pulse-plated electrodeposition

被引：0
|
作者：
Endo, S
Nagahori, Y
Nomura, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 9A期
关键词：
CuInSe2; thin film; chalcopyrite structure; pulse-plated electrodeposition; duty cycle;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
CuInSe2 thin films have been prepared by the pulse-plated electrodeposition from aqueous solutions containing CuCl2, InCl3 and SeO2. The influence of the square pulse cathode potential on the him compositions, crystallinity and surface morphology has been studied. Homogeneous single phase CuInSe2 films with smooth surfaces have been obtained at a pulse potential of -0.8V vs the saturated calomel electrode (SCE), a duty cycle theta of 33%, and annealing treatment.
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页码：L1101 / L1103
页数：3
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