Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films

被引：16
|
作者：
Oogane, Mikihiko [1 ]
McFadden, Anthony P. [2 ]
Kota, Yohei [3 ]
Brown-Heft, Tobias L. [4 ]
Tsunoda, Masakiyo [5 ]
Ando, Yasuo [1 ]
Palmstrom, Chris J. [2 ,4 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[3] Fukushima Coll, Natl Inst Technol, Iwaki, Fukushima 9708034, Japan
[4] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[5] Tohoku Univ, Grad Sch Engn, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 06期
基金：
日本科学技术振兴机构;
关键词：
D O I：
10.7567/JJAP.57.063001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold symmetric AMR was observed in the temperature range of 25-275 K. in addition, the films exhibited a marked change in twofold symmetric AMR below 100 K. This specific temperature dependence of the AMR effect in Co2MnSi films can be caused by the tetragonal crystal field because of the distortion of the lattice at low temperatures. The influence of tetragonal distortion on both the AMR effect and half-metallieity is also discussed by first-principles calculations. (C) 2018 The Japan Society of Applied Physics
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页数：4
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