Phase diagrams and optical properties of phosphide, arsenide, and antimonide binary and ternary III-V nanoalloys

被引：28

作者：

Guisbiers, G. ^{[1
]}

Wautelet, M. ^{[2
]}

Buchaillot, L. ^{[1
]}

机构：

[1] IEMN, CNRS, UMR8520, F-59652 Villeneuve Dascq, France

[2] Univ Mons, B-7000 Mons, Belgium

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 15期

关键词：

aluminium compounds; energy gap; gallium compounds; III-V semiconductors; melting; nanostructured materials; phase diagrams; segregation; surface energy; thermo-optical effects; MELTING TEMPERATURE; SIZE DEPENDENCE; SEMICONDUCTOR NANOCRYSTALS; BIMETALLIC NANOPARTICLES; SMALL PARTICLES; SYSTEMS; SHAPE; NANOSTRUCTURES; SEGREGATION; MISCIBILITY;

D O I：

10.1103/PhysRevB.79.155426

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a theoretical investigation, at the nanoscale, free of any adjustable parameters, concerning the size, shape, composition, and segregation effects on the melting temperature and energy band gap of zinc-blende III-V semiconductors. The corresponding nanophase diagram is established. From it, the composition and segregation effects on the energy band gap of the ternary semiconducting nanoalloy are deduced. Moreover, the liquid surface energies for AlP, GaP, AlAs, and AlSb have been calculated (0.566 +/- 0.060, 0.510 +/- 0.060, 0.506 +/- 0.060 J/m(2), and 0.441 +/- 0.060 J/m(2), respectively). The information obtained in this study can be used to tune the thermo-optical properties of III-V nanomaterials in nano-optoelectronics.

引用

页数：8

共 50 条

[11] Binary III-V semiconductor core optical fiber
Ballato, John
Hawkins, Thomas
Foy, Paul
McMillen, Colin
Burka, Laura
Reppert, Jason
Podila, Ramakrishna
Rao, A. M.
Rice, Robert R.
OPTICS EXPRESS, 2010, 18 (05): : 4972 - 4979
[12] Physicochemical properties, binary and ternary phase diagrams of ketoprofen
Lu, YH
Ching, CB
CHIRALITY, 2004, 16 (08) : 541 - 548
[13] Ternary and quaternary alloy III-V antimonide (InAsSb and InAsSbP) 'virtual' substrates made by liquid-phase epitaxy
Mauk, MG
Tata, A
Cox, JA
Sulima, O
Datta, S
IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (04): : 395 - 398
[14] THERMAL-CONDUCTIVITY OF BINARY, TERNARY, AND QUATERNARY III-V COMPOUNDS
NAKWASKI, W
JOURNAL OF APPLIED PHYSICS, 1988, 64 (01) : 159 - 166
[15] THE DLP MODEL - INFLUENCE OF CHEMICAL DISORDER AND THE SUBSTRATE OF EPITAXY ON THE III-V QUATERNARY AND TERNARY PHASE-DIAGRAMS
MARBEUF, A
GUILLAUME, JC
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 47 - 60
[16] Pressure-induced metallic phase transition and elastic properties of indium phosphide III-V semiconductor
Chenghua Hu
Feng Wang
Zhou Zheng
Journal of Materials Research, 2012, 27 : 1105 - 1111
[17] Pressure-induced metallic phase transition and elastic properties of indium phosphide III-V semiconductor
Hu, Chenghua
Wang, Feng
Zheng, Zhou
JOURNAL OF MATERIALS RESEARCH, 2012, 27 (08) : 1105 - 1111
[18] CALCULATION OF TERNARY-III-V AND QUATERNARY-III-V PHASE-DIAGRAMS
STRINGFELLOW, GB
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 21 - 34
[19] Thermal etching of binary and ternary III-V compounds under vacuum conditions
Alexeev, AN
Karpov, SY
Maiorov, MA
Myachin, VE
Pogorelsky, YV
Sokolov, IA
JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 167 - 171
[20] Temperature Dependency of Photoelectronic Properties of Group III-V Arsenide Solar Cell
Humayun, Md. Abdullah Al
Hossen, Masum
Haider, Md. Zamil
Yousif, Bedir
Chughtai, Muhammad Tajammal
Islam, Muhammad
Khan, Sheroz
ENGINEERING TECHNOLOGY & APPLIED SCIENCE RESEARCH, 2024, 14 (02) : 13430 - 13436

← 1 2 3 4 5 →