Electronic structure and thermoelectric properties of ytterbium-filled skutterudites

被引:0
|
作者
Anno, H [1 ]
Ashida, K [1 ]
Matsubara, K [1 ]
Nolas, GS [1 ]
Akai, K [1 ]
Matsuura, M [1 ]
Nagao, J [1 ]
机构
[1] Sci Univ Tokyo, Dept Elect & Comp Sci, Onoda 7560884, Japan
来源
THERMOELECTRIC MATERIALS 2001-RESEARCH AND APPLICATIONS | 2001年 / 691卷
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure and thermoelectric properties of Yb partially filled CoSb3 skutterudite compounds have been investigated by x-ray photoelectron spectroscopy and band calculation in terms of an itinerant f electron model. In these materials, the significant effect of Yb filling is the large reduction of lattice thermal conductivity, remaining relatively high electron mobility and Seebeck coefficient, resulting in high thermoelectric figure of merit. We discuss the effects of the valence fluctuation between Yb2+ and Yb3+ and the strong hybridization of Yb 4f states with the valence band states on the electronic properties and their relation to thermoelectric properties for Yb partially filled CoSb3 compounds.
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页码:49 / 54
页数:6
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