Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes

被引：30
|
作者：
Stahlbush, RE [1 ]
Fedison, JB
Arthur, SD
Rowland, LB
Kretchmer, JW
Wang, S
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
[2] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA
[3] Gen Elect, Ctr Corp Res & Dev, Niskayuna, NY 12309 USA
[4] Sterling Semicond, Danbury, CT 06810 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
current degradation; electroluminescence; PiN diodes; stacking faults;
D O I：
10.4028/www.scientific.net/MSF.389-393.427
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Stacking fault growth in 4H SiC PiN diodes at I A (160 A/cm(2)) has been examined by light emission imaging. Dark areas of reduced current flow develop due to stacking fault nucleation and growth. The voltage increase at constant current varies by an order of magnitude within the same wafer and the length scale of the variations is 2-3 mm. The variations are explained by the number of stacking faults that nucleate and by pinning of the stacking fault growth.
引用
收藏
页码：427 / 430
页数：4
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