Bond orbital model for wurtzite semiconductors

被引：3
|
作者：
Chen, CN [1 ]
机构：
[1] Far E Coll, Dept Elect Engn, Tainan 744, Taiwan
来源：
PHYSICS LETTERS A | 2004年 / 329卷 / 1-2期
关键词：
GaN; bond orbital model; Wurtzite; band structure; k center dot p;
D O I：
10.1016/j.physleta.2004.06.083
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The bond orbital Hamiltonian for wurtzite semiconductors is developed. This method contains no fitting parameters, and all interaction parameters involved are: directly related to the k (.) p parameters for describing bulk bands near the Brillouin zone center. A comparative study of wurtzite GaN band structures between the bond orbital model and the k (.) p method is also made. (C) 2004 Elsevier B.V. All rights reserved.
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页码：136 / 139
页数：4
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