Guiding and confining light in void nanostructure

被引:1430
|
作者
Almeida, VR [1 ]
Xu, QF [1 ]
Barrios, CA [1 ]
Lipson, M [1 ]
机构
[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
关键词
D O I
10.1364/OL.29.001209
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at high-index-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 mum(-2). This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides. (C) 2004 Optical Society of America.
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页码:1209 / 1211
页数:3
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