Atomic layer deposition of ZrO2 thin films using a new alkoxide precursor

被引：45
|
作者：
Matero, R
Ritala, M
Leskelä, M
Jones, AC
Williams, PA
Bickley, JF
Steiner, A
Leedham, TJ
Davies, HO
机构：
[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland
[2] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England
[3] Inorgtech Ltd, Mildenhall IP28 7DE, Suffolk, England
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 303卷 / 01期
基金：
芬兰科学院;
关键词：
D O I：
10.1016/S0022-3093(02)00959-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Zirconium oxide thin films were grown by atomic layer deposition using a new type of Zr alkoxide: [Zr(O' Bu)(2)(dmae)(2)](2) (dmae is dimethylaminoethoxide). Water was used as the oxygen source. The films grown at 190-240 degreesC were amorphous, and the films grown at 290-340 degreesC were nanocrystalline. The highest refractive index of the films was 2.08 at a wavelength of 580 um. The permittivity of a film grown at 240 degreesC was 25. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：24 / 28
页数：5
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