Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot

被引：0

作者：

Klochan, O. ^{[1
]}

Micolich, A. P. ^{[1
]}

Hamilton, A. R. ^{[1
]}

Trunov, K. ^{[2
]}

Reuter, D. ^{[2
]}

Wieck, A. D. ^{[2
]}

机构：

[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia

[2] Ruhr Univ Bouchum, Angewandte Festkorperphys, D-44780 Bochum, Germany

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

holes in GaAs; quantum dot; Kondo effect; RESISTANCE;

D O I：

10.1063/1.4848430

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.

引用

页码：351 / +

页数：2

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