Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot

被引：0
|
作者：
Klochan, O. [1 ]
Micolich, A. P. [1 ]
Hamilton, A. R. [1 ]
Trunov, K. [2 ]
Reuter, D. [2 ]
Wieck, A. D. [2 ]
机构：
[1] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
[2] Ruhr Univ Bouchum, Angewandte Festkorperphys, D-44780 Bochum, Germany
来源：
PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷
关键词：
holes in GaAs; quantum dot; Kondo effect; RESISTANCE;
D O I：
10.1063/1.4848430
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the observation of the Kondo effect in a spin-3/2 hole quantum dot formed near pinch-off in a GaAs quantum wire. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the zero-bias peak in the differential conductance splits an in-plane magnetic field and the splitting is independent of gate voltage. Second, the splitting rate is twice as large as that for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly anisotropic and attribute this to the strong spin-orbit interaction for holes in GaAs.
引用
收藏
页码：351 / +
页数：2
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