Characterization of ESD Protection Devices under Total Ionizing Dose Irradiation

被引：0
|
作者：
Liang, Wei [1 ]
Alexandrou, Kostas [2 ]
Klebanov, Maxim [3 ]
Kuo, Chung-Chen [3 ]
Kymissis, Ioannis [2 ]
Sundaram, Kalpathy B. [1 ]
Liou, Juin J. [1 ]
机构：
[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA
[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[3] Allegro MicroSyst LLC, Worcester, MA 01606 USA
来源：
2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2017年
关键词：
ORBIT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the total ionizing dose effects on electrostatic discharge (ESD) protection devices are investigated. Irradiation is conducted with 1.5 MeV He+ from a RPEA 4.0 MV Dynamitron accelerator, and the Barth 4002 transmission line pulse (TLP) tester is used for measurements. The ESD devices considered are a P+/NW diode, a Zener diode, gate grounded NMOS (GGNMOS), and lateral silicon controlled rectifiers (LSCR) fabricated in a 0.35 um BCD (Bipolar-CMOS-DMOS) technology. The pre- and post-irradiated TLP I-V characteristics are analyzed and compared in detail. Significant degradation in ESD protection is observed after exposure of devices to ionizing irradiation.
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页数：4
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