Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC

被引：0
|
作者：
Klaver, A [1 ]
Warman, JM [1 ]
de Haas, MP [1 ]
Metselaar, JW [1 ]
van Swaaij, RACMM [1 ]
机构：
[1] Delft Univ Technol, DIMES, ECTM, NL-2600 GB Delft, Netherlands
来源：
AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004 | 2004年 / 808卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of 3-MeV electron irradiation on a-Si:H have been studied using Time-Resolved Microwave Conductivity (TRMC). A Van der Graaff electron accelerator is used to generate the probe-beam pulses for the TRMC experiment as well as for the in-situ irradiation of the samples for the degradation of the material. Using several probe-beam pulse doses, TRMC transients were obtained on samples that have been subjected to various radiation fluences. These transients were later analyzed using a simple model based on the Shockley-Read-Hall capture and emission processes. Using these simulations we deduce a relationship between the radiation fluence and the defect density in the material.
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页码：165 / 170
页数：6
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