Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC

被引：0

作者：

Klaver, A ^{[1
]}

Warman, JM ^{[1
]}

de Haas, MP ^{[1
]}

Metselaar, JW ^{[1
]}

van Swaaij, RACMM ^{[1
]}

机构：

[1] Delft Univ Technol, DIMES, ECTM, NL-2600 GB Delft, Netherlands

来源：

AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004 | 2004年 / 808卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of 3-MeV electron irradiation on a-Si:H have been studied using Time-Resolved Microwave Conductivity (TRMC). A Van der Graaff electron accelerator is used to generate the probe-beam pulses for the TRMC experiment as well as for the in-situ irradiation of the samples for the degradation of the material. Using several probe-beam pulse doses, TRMC transients were obtained on samples that have been subjected to various radiation fluences. These transients were later analyzed using a simple model based on the Shockley-Read-Hall capture and emission processes. Using these simulations we deduce a relationship between the radiation fluence and the defect density in the material.

引用

页码：165 / 170

页数：6

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