Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

被引：6

作者：

Wong, Yuen-Yee ^{[1
]}

Chang, Edward Yi ^{[1
,2
]}

Huang, Wei-Ching ^{[1
]}

Lin, Yueh-Chin ^{[1
]}

Tu, Yung-Yi ^{[1
]}

Chen, Kai-Wei ^{[1
]}

Yu, Hung-Wei ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 09期

关键词：

CHEMICAL-VAPOR-DEPOSITION; GAN/SAPPHIRE INTERFACE; SEMIINSULATING GAN; V/III RATIO; LAYER; SAPPHIRE; QUALITY; FILMS; COALESCENCE; NUCLEATION;

D O I：

10.7567/APEX.7.095502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high-electron-mobility transistors (HEMTs) with different initial GaN growth modes were prepared on AIN/sapphire substrates. Secondary ion mass spectroscopy and Hall effect measurements confirmed that a highly conductive n-type region was generated at the GaN/AIN buffer interface during the three-dimensional to two-dimensional (3D-2D) growth mode transition. This n-type region was created by oxygen impurity incorporation during the 3D-2D growth mode transition, and its thickness increased with the transition time. The existence of this n-type conduction path not only changed the material properties but also degraded the device performance of HEMTs. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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