The effect of hot phonons on the drift Velocity in GaN/AlGaN two dimensional electron gas

被引：6
|
作者：
Gökden, S [1 ]
机构：
[1] Balikesir Univ, Dept Phys, TR-10100 Balikesir, Turkey
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 23卷 / 1-2期
关键词：
GaN; hot phonon; drift velocity;
D O I：
10.1016/j.physe.2004.03.008
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present the effect of hot-phonon production on the high-field drift velocity in the steady state in GaN/AlGaN heterostructures. The results are compared with a model taking into account the effect of hot phonon production on the high-field transport of electrons. Experimental results show that the drift velocity saturates at around v(d) approximate to 3.8 x 10(5) cm/s at an electric field of F approximate to 8.9 x 10(2) V/cm at 3.8 K. The theoretical calculations show that the enhancement of the momentum relaxation rate due to the production of non-drifting hot phonons reduces the drift velocity at high field. The reduction in the drift velocity increases with increasing population of non-drifting non-equilibrium phonons (LO phonons). (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：198 / 203
页数：6
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