GaN HEMT Driving Scheme of Totem-Pole Bridgeless PFC Converter

被引：0
|
作者：
Li, Binxing [1 ]
Zhang, Rongchi [1 ]
Zhao, Nannan [1 ]
Wang, Gaolin [1 ]
Huo, Junya [1 ,2 ]
Zhu, Lianghong [1 ,2 ]
Xu, Dianguo [1 ]
机构：
[1] Harbin Inst Technol, Sch Elect Engn & Automat, Harbin, Heilongjiang, Peoples R China
[2] GD Midea Air Conditioning Equipment Co Ltd, Foshan, Peoples R China
来源：
2018 IEEE INTERNATIONAL POWER ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC) | 2018年
基金：
美国国家科学基金会;
关键词：
GaN HEMT; totem-pole bridgeless PFC circuit; parasitic; Miller effects; drive circuits design; DESIGN;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to the excellent reverse recovery characteristics, gallium nitride high electron mobility transistor (GaN HEMT) is the ideal device for totem-pole bridgeless PFC circuits. However, the driving technology of GaN HEMT deserves to be concerned when working in a complementary conduction mode in a half-bridge circuit. Because of the parasitic parameters, the driving signal may oscillate and even malfunction may occur, hence the device may be damaged. In this paper, the influence of the impedance of the driving circuit and Miller capacitance on the drive circuit is analyzed. Meanwhile, the corresponding solution is given and a feasible drive scheme is proposed. An experiment platform of the totem-pole bridgeless PFC converter is built and experimental results could verify the effectiveness of the proposed drive scheme.
引用
收藏
页码：1053 / 1058
页数：6
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