Metal-to-insulator switching in quantum anomalous Hall states

被引:144
|
作者
Kou, Xufeng [1 ]
Pan, Lei [1 ]
Wang, Jing [2 ]
Fan, Yabin [1 ]
Choi, Eun Sang [3 ]
Lee, Wei-Li [4 ]
Nie, Tianxiao [1 ]
Murata, Koichi [1 ]
Shao, Qiming [1 ]
Zhang, Shou-Cheng [2 ]
Wang, Kang L. [1 ]
机构
[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA
[2] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[3] Florida State Univ, Natl High Magnet Field Lab, Tallahassee, FL 32310 USA
[4] Acad Sinica, Inst Phys, Taipei 11529, Taiwan
来源
NATURE COMMUNICATIONS | 2015年 / 6卷
基金
美国国家科学基金会;
关键词
MAGNETIC TOPOLOGICAL INSULATORS; THIN-FILMS; SEMICIRCLE; INTEGER; BI2SE3;
D O I
10.1038/ncomms9474
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
After decades of searching for the dissipationless transport in the absence of any external magnetic field, quantum anomalous Hall effect (QAHE) was recently achieved in magnetic topological insulator films. However, the universal phase diagram of QAHE and its relation with quantum Hall effect (QHE) remain to be investigated. Here, we report the experimental observation of the giant longitudinal resistance peak and zero Hall conductance plateau at the coercive field in the six quintuple-layer (Cr0.12Bi0.26Sb0.62)(2)Te-3 film, and demonstrate the metal-to-insulator switching between two opposite QAHE plateau states up to 0.3 K. Moreover, the universal QAHE phase diagram is confirmed through the angle-dependent measurements. Our results address that the quantum phase transitions in both QAHE and QHE regimes are in the same universality class, yet the microscopic details are different. In addition, the realization of the QAHE insulating state unveils new ways to explore quantum phase-related physics and applications.
引用
收藏
页数:8
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