Far-infrared ellipsometry of depleted surface layer in heavily doped n-type GaAs

被引：23
|
作者：
Humlicek, J [1 ]
Henn, R [1 ]
Cardona, M [1 ]
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-70569 STUTTGART,GERMANY
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 17期
关键词：
D O I：
10.1063/1.117706
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Far-infrared ellipsometric spectra of n-type (100) GaAs display sharp features in the range of the longitudinal optical phonon of intrinsic material, originating in the surface depletion region. We compare measured relative ellipsometric phase shifts with model calculations of the graded depletion layer. A very good agreement is observed, enabling us to determine the surface potential. (C) 1996 American Institute of Physics.
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页码：2581 / 2583
页数：3
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