Deposition of bismuth chalcogenide thin films using novel single-source precursors by metal-organic chemical vapor deposition

被引：111
|
作者：
Waters, J
Crouch, D
Raftery, J
O'Brien, P
机构：
[1] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Ctr Mat Sci, Manchester M13 9PL, Lancs, England
来源：
CHEMISTRY OF MATERIALS | 2004年 / 16卷 / 17期
关键词：
D O I：
10.1021/cm035287o
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The metal-organic compounds, Bi[(EPR2)(2)N](3) (E = S, Se; R = Ph, Pr-i), have been synthesized and used as single-source precursors for the deposition of bismuth chalcogenide thin films via low-pressure and aerosol-assisted metal-organic chemical vapor deposition. Crystalline thin films of rhombohedral Bi2Se3 (using Bi[((SePPr2)-Pr-i)(2)N](3)), hexagonal BiSe (using Bi[(SePPh2)(2)N](3)), and orthorhombic Bi2S3 (using Bi[(SPR2)(2)N](3)) have been deposited on glass substrates. Films have been characterized by X-ray powder diffraction, scanning electron microscopy, and energy-dispersive analysis of X-rays.
引用
收藏
页码：3289 / 3298
页数：10
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