Crystal Growth from the Melt under External Force Fields

被引:35
|
作者
Rudolph, R. [2 ,3 ]
Kakimoto, K. [1 ]
机构
[1] Kyushu Univ, Appl Mech Res Inst, Fukuoka 8168580, Japan
[2] Humboldt Univ, Inst Crystallog & Mat Sci, Berlin, Germany
[3] Tohoku Univ, Sendai, Miyagi 980, Japan
关键词
ACCELERATED CRUCIBLE-ROTATION; TRAVELING MAGNETIC-FIELD; FLUID FLOW CONTROL; OXYGEN CONCENTRATION; INTERFACE SHAPE; SEMICONDUCTOR CRYSTALS; MORPHOLOGICAL STABILITY; SILICON-CRYSTALS; SOLID-SOLUTIONS; HEATER METHOD;
D O I
10.1557/mrs2009.75
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The present and future demands of industrial bulk crystal growth from the melt are concentrated on improved crystal quality, increased yield, and reduced costs. To meet these challenges, the size of the melt volume must be markedly increased. As a result, violent convective perturbations appear within the melts due to turbulent heat and mass flows. They disturb the single crystal growth and give rise to compositional in homogeneities. The application of external force fields is an effective method to dampen and control these flows. After introducing different stabilizing variants, such as constant and accelerated melt rotation, mechanical vibrations, and electric current, this article focuses on the use of magnetic fields. Nonsteady fields became very popular because, in this case, the needed strength of the magnetic induction is much lower than for steady fields. A new low-energy low-cost technology that combines heat and magnetic field generation in one module placed close to the melt crucible is introduced.
引用
收藏
页码:251 / 258
页数:8
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