Evaluation of 193-nm immersion resist without topcoat

被引:4
|
作者
Wei, Yayi
Stepanenko, Nickolay
Laessig, Antje
Voelkel, Lars
Sebald, Michael
机构
[1] Qimonda N Amer Corp, Adv Lithpg Dev Albany, Albany, NY 12203 USA
[2] Qimonda SC300 GmbH & Co, OHG, D-01099 Dresden, Germany
[3] Qimonda AG, D-91058 Erlangen, Germany
关键词
193-nm immersion lithography; resists; process window; prerinse; postrinse;
D O I
10.1117/1.2358128
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A production-preferred solution is 193-nm immersion resist without a topcoat. The challenge of 193-nm immersion resist is both low leaching level and high performance. We summarize the screening results of selected 193-nm immersion resists that are designed for use without top coatings. Our evaluation is divided into several phases. Leaching levels of resist samples are first tested. The leaching data are analyzed and compared to our specifications. Both binary intensity mask and alternating phase-shift mask exposures are performed to evaluate the process window, lineedge roughness, and resist pattern profile. Resist films are rinsed by deionized (DI) water prior to or after exposure, and contrast curves are measured to investigate the resist sensitivity change. The results are compared with resist systems that use developer-soluble topcoats. (C) 2006 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页数:8
相关论文
共 50 条
  • [31] Top-surface imaged resist processes for 193-nm lithography
    Kunz, R.R.
    Palmateer, S.C.
    Forte, A.R.
    Horn, M.W.
    Polymeric Materials Science and Engineering, Proceedings of the ACS Division of Polymeric Materials Science and Engineering, 72
  • [32] SEM and AFM investigation for accurate measurements of 193-nm resist profiles
    Reiche, Rainer
    Bartkowiak, Rene
    Heller, Marcel
    Rosenkranz, Ruediger
    ISTFA 2006, 2006, : 334 - 338
  • [33] TOP-SURFACE IMAGED RESIST PROCESSES FOR 193-NM LITHOGRAPHY
    KUNZ, RR
    PALMATEER, SC
    FORTE, AR
    HORN, MW
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1995, 209 : 63 - PMSE
  • [34] Silicon-rich-methacrylate bilayer resist for 193-nm lithography
    Blakeney, A
    Gabor, A
    White, D
    Steinhausler, T
    Deady, W
    Jarmalowicz, J
    Kunz, R
    Dean, K
    Rich, G
    Stark, D
    SOLID STATE TECHNOLOGY, 1998, 41 (06) : 69 - +
  • [35] 193-nm lithography
    Rothschild, M
    Forte, AR
    Horn, MW
    Kunz, RR
    Palmateer, SC
    Sedlacek, JHC
    LASERS AS TOOLS FOR MANUFACTURING OF DURABLE GOODS AND MICROELECTRONICS, 1996, 2703 : 398 - 404
  • [36] Surface property control for 193nm immersion resist
    Irie, Makiko
    Endo, Kotaro
    Iwai, Takeshi
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2006, 19 (04) : 565 - 568
  • [37] 193-NM LITHOGRAPHY
    ROTHSCHILD, M
    FORTE, AR
    HORN, MW
    KUNZ, RR
    PALMATEER, SC
    SEDLACEK, JHC
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (03) : 916 - 923
  • [38] A new class of low bake resists for 193-nm immersion lithography
    Sooriyakumarn, R.
    DiPietro, Richard
    Truong, Hoa
    Brock, Phillip
    Allen, Robert
    Bozano, Luisa
    Popova, Irene
    Huang, Wu-Song
    Chen, Rex
    Khojasteh, Mahmoud
    Varanasi, Pushkara Rao
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
  • [39] Synthesis of fluorinated materials for 193-nm immersion lithography and 157-nm lithography
    Yamashita, T
    Ishikawa, T
    Yoshida, T
    Hayamai, I
    Araki, T
    Aoyama, H
    Hagiwara, T
    Itani, T
    Fujii, K
    Advances in Resist Technology and Processing XXII, Pt 1 and 2, 2005, 5753 : 564 - 571
  • [40] High-index optical materials for 193-nm immersion lithography
    Burnett, John H.
    Kaplan, Simon G.
    Shirley, Eric L.
    Horowitz, Deane
    Clauss, Wilfried
    Grenville, Andrew
    Van Peski, Chris
    OPTICAL MICROLITHOGRAPHY XIX, PTS 1-3, 2006, 6154 : U545 - U556