Synthesis of stable amorphous Cu2S thin film by successive ion layer adsorption and reaction method

被引：69
|
作者：
Zhuge, Fuwei [1 ]
Li, Xiaomin [1 ]
Gao, Xiangdong [1 ]
Gan, Xiaoyan [1 ]
Zhou, Fengling [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源：
MATERIALS LETTERS | 2009年 / 63卷 / 08期
基金：
中国国家自然科学基金;
关键词：
Thin films; Cu2S; SILAR; Solar energy materials; GROWTH; CELLS;
D O I：
10.1016/j.matlet.2008.12.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous Cu2S thin films were deposited on ITO substrate by successive ion layer adsorption and reaction (SILAR) method. Anionic thiosulfatocopper (1) complex ion was used as the single precursor for copper and sulfide ions, and ethylene glycol was used as the solvent. The stoichiometric Cu2S was confirmed by energy dispersive X-ray spectroscopy (EDS). SEM images indicated that the Cu2S films were uniform and composed of nanoparticles. The prepared Cu2S film exhibited high absorption coefficients and wide band gap (higher than 2.55 eV). (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：652 / 654
页数：3
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