Role of nitrogen incorporation into Al2O3-based resistive random-access memory

被引：12

作者：

Yang, Moon Young ^{[1
]}

Kamiya, Katsunnasa ^{[2
]}

Shirakawa, Hiroki ^{[1
]}

Magyari-Koepe, Blanka ^{[3
]}

Nishi, Yoshio ^{[3
]}

Shiraishi, Kenji ^{[4
]}

机构：

[1] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058571, Japan

[2] Kanagawa Inst Technol, Ctr Basic Educ & Integrated Learning, Atsugi, Kanagawa 2430292, Japan

[3] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[4] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 07期

关键词：

TRANSITION; 1ST-PRINCIPLES;

D O I：

10.7567/APEX.7.074202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We theoretically study the role of nitrogen incorporation into Al2O3-based resistive random-access memory (ReRAM) by using first-principles calculations. In ReRAM devices, the oxygen vacancy (V-O) has been believed to be the origin of ON-OFF switching. We reveal that the V-O formation energy is significantly reduced by nitrogen incorporation into Al2O3, resulting in a forming-free ReRAM device. Moreover, nitrogen atoms tend to favorably couple with oxygen vacancies, stabilizing the conductive filament by suppression of V-O diffusion. Accordingly, nitrogen incorporation improves the quality of Al2O3-based ReRAM devices. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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