Role of nitrogen incorporation into Al2O3-based resistive random-access memory

We theoretically study the role of nitrogen incorporation into Al2O3-based resistive random-access memory (ReRAM) by using first-principles calculations. In ReRAM devices, the oxygen vacancy (V-O) has been believed to be the origin of ON-OFF switching. We reveal that the V-O formation energy is significantly reduced by nitrogen incorporation into Al2O3, resulting in a forming-free ReRAM device. Moreover, nitrogen atoms tend to favorably couple with oxygen vacancies, stabilizing the conductive filament by suppression of V-O diffusion. Accordingly, nitrogen incorporation improves the quality of Al2O3-based ReRAM devices. (C) 2014 The Japan Society of Applied Physics