The effect of preheating inductor electromagnetic field frequency on temperature gradient in the process of silicon single-crystal growth

被引：2
|
作者：
Egorov, S. G. [1 ]
Chervonyi, I. F. [1 ]
Volyar, R. N. [1 ]
机构：
[1] Zaporozhe State Engn Acad, Zaporozhe, Ukraine
来源：
INORGANIC MATERIALS | 2009年 / 45卷 / 06期
关键词：
Heating Inductor; Silicon Single Crystal; Current Frequency; Melting Inductor; Molten Zone;
D O I：
10.1134/S0020168509060028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The process of obtaining a silicon single crystal grown with crucibleless zone melting and heated with the use of a preheating inductor is studied. The preheating inductor electromagnetic field strength and temperature gradient within the single crystal are simulated.
引用
收藏
页码：596 / 598
页数：3
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