The effect of preheating inductor electromagnetic field frequency on temperature gradient in the process of silicon single-crystal growth

被引：2

作者：

Egorov, S. G. ^{[1
]}

Chervonyi, I. F. ^{[1
]}

Volyar, R. N. ^{[1
]}

机构：

[1] Zaporozhe State Engn Acad, Zaporozhe, Ukraine

来源：

INORGANIC MATERIALS | 2009年 / 45卷 / 06期

关键词：

Heating Inductor; Silicon Single Crystal; Current Frequency; Melting Inductor; Molten Zone;

D O I：

10.1134/S0020168509060028

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The process of obtaining a silicon single crystal grown with crucibleless zone melting and heated with the use of a preheating inductor is studied. The preheating inductor electromagnetic field strength and temperature gradient within the single crystal are simulated.

引用

页码：596 / 598

页数：3

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