Polycrystalline MnGe2 thin films on InAs(001) substrates

被引：2

作者：

Gutierrez-Naranjo, David ^{[1
]}

Holguin-Momaca, Jose T. ^{[1
]}

Solis-Canto, Oscar O. ^{[1
]}

Gupta, Preeti ^{[2
]}

Poddar, Pankaj ^{[2
]}

Espinosa Magana, Francisco ^{[1
]}

Olive-Mendez, Sion F. ^{[1
]}

机构：

[1] Ctr Invest Mat Avanzados SC CIMAV, Av Miguel de Cervantes 120, Chihuahua 31136, Chih, Mexico

[2] Natl Chem Lab, Phys & Mat Chem Div, Dr Homi Bhabha Rd, Pune 411008, Maharashtra, India

来源：

THIN SOLID FILMS | 2018年 / 657卷

关键词：

Manganese germanide; Thin films; Indium arsenide substrates; Ferromagnetism; Sputtering; 14/mcm; TEMPERATURE FERROMAGNETISM; MAGNETIC-PROPERTIES; CLUSTERS;

D O I：

10.1016/j.tsf.2018.05.007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the growth of MnGe2 thin films on InAs(001) substrates using radio frequency-magnetron cosputtering. Polycrystalline thin films were obtained at a substrate temperature of 353 K. X-ray diffractometry was used to identify the tetragonal MnGe2 phase (space group 14/mcm). Measurements of the magnetic field and temperature dependence of the magnetization revealed that the MnGe2 thin films are ferromagnetic with a magnetization of 280 kAm(-1) and a Curie temperature of 62 K. Additionally, an antiferromagnetic component is observed at low temperatures, which may arise atomic disorder at the grain boundaries between MnGe2 crystallites.

引用

页码：38 / 41

页数：4

共 50 条

[21] Crystallization of thin polycrystalline PZT films on Si/SiO2/Pt substrates
Pronin, I. P.
Kaptelov, E. Yu.
Senkevich, S. V.
Klimov, V. A.
Zaitseva, N. V.
Shaplygina, T. A.
Pronin, V. P.
Kukushkin, S. A.
PHYSICS OF THE SOLID STATE, 2010, 52 (01) : 132 - 136
[22] Cubic HfN Thin Films with Low Resistivity on Si (001) and MgO (001) Substrates
Roy A. Araujo
Xinghang Zhang
Haiyan Wang
Journal of Electronic Materials, 2008, 37 : 1828 - 1831
[23] Cubic HfN Thin Films with Low Resistivity on Si (001) and MgO (001) Substrates
Araujo, Roy A.
Zhang, Xinghang
Wang, Haiyan
JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (12) : 1828 - 1831
[24] Metallic thin films of TTF[Ni(dmit)2]2 by electrodeposition on (001)-oriented silicon substrates
de Caro, D
Fraxedas, J
Faulmann, C
Malfant, I
Milon, J
Lamère, JF
Collière, V
Valade, L
ADVANCED MATERIALS, 2004, 16 (9-10) : 835 - +
[25] Exchange bias in epitaxial and polycrystalline thin film Ru2MnGe/Fe bilayers
1600, American Institute of Physics Inc. (118):
[26] Reactions of Y2O3 films with (001) Si substrates and with polycrystalline Si capping layers
Stemmer, S
Klenov, DO
Chen, ZQ
Niu, D
Ashcraft, RW
Parsons, GN
APPLIED PHYSICS LETTERS, 2002, 81 (04) : 712 - 714
[27] Properties of polycrystalline SrRuO3 thin films on Si substrates
Sony Corp Atsugi Technology Cent, Kanagawa-ken, Japan
Mater Res Bull, 1 (83-96):
[28] Properties of polycrystalline SrRuO3 thin films on Si substrates
Watanabe, K
Ami, M
Tanaka, M
MATERIALS RESEARCH BULLETIN, 1997, 32 (01) : 83 - 96
[29] Mechanisms of time-dependent plasticity in polycrystalline thin films on substrates
Dalbec, TR
Leung, OS
Nix, WD
DEFORMATION, PROCESSING, AND PROPERTIES OF STRUCTURAL MATERIALS: SYMPOSIUM HONORING PROFESSOR OLEG D SHERBY, 2000, : 95 - 108
[30] MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates
Feng, PX
Riley, JD
Leckey, RCG
Ley, L
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (09) : 1293 - 1300

← 1 2 3 4 5 →