Synergy improvement of dielectric properties and thermal conductivity in PVDF composites with core-shell structured Ni@SiO2

被引:20
|
作者
Li, Ting [1 ]
Zhou, Wenying [1 ]
Li, Ying [2 ]
Cao, Dan [1 ]
Wang, Yun [1 ]
Cao, Guozheng [1 ]
Liu, Xiangrong [1 ]
Cai, Huiwu [1 ]
Dang, Zhi-Min [1 ,3 ]
机构
[1] Xian Univ Sci & Technol, Sch Chem & Chem Engn, Xian 710054, Peoples R China
[2] Xian Univ Sci & Technol, Coll Mat Sci & Engn, Xian 710054, Peoples R China
[3] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China
基金
中国国家自然科学基金;
关键词
POLYMER NANOCOMPOSITES; BREAKDOWN STRENGTH; ENERGY DENSITY; PERMITTIVITY; PERFORMANCE; EFFICIENCY; CONSTANT;
D O I
10.1007/s10854-020-05149-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Developing a high dielectric constant (epsilon(r)) polymer dielectrics with low dielectric loss and high thermal conductivity (TC) is still continuous demands for advanced electrical power systems. Herein, nickel (Ni) particles were encapsulated by silica (SiO2) via a sol-gel process using sodium silicate as a precursor, and the obtained core-shell Ni@SiO2 powders were blended into poly(vinylidene fluoride) (PVDF) to investigate the effects of SiO2 insulating layer and its thickness on dielectric properties and TC of composites. Compared with pristine Ni, the Ni@SiO2/PVDF composites exhibit a superior epsilon(r), and remarkably suppressed loss and conductivity, attributable to the SiO2 interlayer between the core Ni particles which effectively prevents them from direct contacts and significantly reduces the leakage loss. Moreover, the Ni@SiO2/PVDF composites still possess a high TC owing to the restrained thermal interfacial resistance and enhanced interfacial compatibility between the fillers and the matrix. The developed Ni@SiO2/PVDF composites with high k and TC but low loss are potential for microelectronic industry.
引用
收藏
页码:4076 / 4089
页数:14
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