MgNiO-based metal-semiconductor-metal ultraviolet photodetector

被引：29

作者：

Zhao, Yanmin ^{[1
,2
]}

Zhang, Jiying ^{[1
]}

Jiang, Dayong ^{[1
,2
]}

Shan, Chongxin ^{[1
]}

Zhang, Zhenzhong ^{[1
]}

Yao, Bin ^{[1
]}

Zhao, Dongxu ^{[1
]}

Shen, Dezhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 09期

基金：

中国国家自然科学基金;

关键词：

THIN-FILMS; EPITAXIAL-GROWTH; DETECTOR; MGXZN1-XO; REGION;

D O I：

10.1088/0022-3727/42/9/092007

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we report the growth of MgxNi1-xO thin films on quartz substrates by electron beam evaporation. The absorption edge shows a blue shift from 340 nm to 260 nm with increase in the Mg content from 0.2 to 0.8. A metal-semiconductor-metal structured photodetector is fabricated from the Mg0.2Ni0.8O film. At a bias of 5V, the dark current of the photodetector is about 70 nA. The maximum responsivity is about 147.3 mu AW(-1) at 320 nm. In addition, the ultraviolet (UV) (320 nm) to visible (400 nm) rejection ratio is nearly two orders of magnitude. Based on these results, it is proposed that MgxNi1-xO is a potential candidate for application in UV photodetectors.

引用

页数：4

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