Lasing characteristics of self-formed quantum-dot lasers with multistacked dot layer

被引:52
|
作者
Shoji, H
Nakata, Y
Mukai, K
Sugiyama, Y
Sugawara, M
Yokoyama, N
Ishikawa, H
机构
[1] Fujitsu Laboratories Ltd.
关键词
crystal growth; lasers; measurement; physics; quantum-well devices; semiconductor lasers; stimulated emission; ROOM-TEMPERATURE; THRESHOLD; PHOTOLUMINESCENCE; EMISSION; INGAAS; NM;
D O I
10.1109/2944.605654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Room-temperature continuous-wave (CW) operation at the ground state has been achieved in self-formed quantum-dot lasers with multistacked dot layer, By systematic investigation, discontinuous shifts of lasing wavelength from the high-order subbands to the ground state are clearly demonstrated for the first time by varying the number of dot layers and the cavity loss, Lasers oscillating at different subbands exhibit different behaviors against temperature both in the spectral characteristics and in the threshold currents, which are strongly related to emission efficiency of quantum dots and thermal excitation of carriers to higher order subbands, High characteristic temperature over 300 ii has been achieved in a laser with high-reflection coating on both facets in the temperature range 60-200 K. Future prospects of improvement in the laser characteristics are also discussed.
引用
收藏
页码:188 / 195
页数:8
相关论文
共 50 条
  • [31] Semiconductor quantum-dot lasers and amplifiers
    Hvam, JM
    Borri, P
    Ledentsov, NN
    Bimberg, D
    SEMICONDUCTOR LASERS AND OPTICAL AMPLIFIERS FOR LIGHTWAVE COMMUNICATION SYSTEMS, 2002, 4871 : 130 - 140
  • [32] Optically injected quantum-dot lasers
    Erneux, T.
    Viktorov, E. A.
    Kelleher, B.
    Goulding, D.
    Hegarty, S. P.
    Huyet, G.
    OPTICS LETTERS, 2010, 35 (07) : 937 - 939
  • [33] Tunneling injection quantum-dot lasers
    Chuang, SL
    Kondratko, K
    Kim, J
    Walter, G
    Holonyak, N
    Heller, R
    Zhang, X
    Dupuis, R
    Novel In-Plane Semiconductor Lasers IV, 2005, 5738 : 347 - 354
  • [34] Carrier statistics in quantum-dot lasers
    M. Grundmann
    R. Heitz
    D. Bimberg
    Physics of the Solid State, 1998, 40 : 772 - 774
  • [35] From localization to quantum-dot chains in self-formed core-shell InGaN nanowires emitting in the red
    Deng, Rongli
    Lin, Haibin
    Hu, Qichuan
    Wang, Dan
    Wu, Bo
    Notzel, Richard
    APPLIED PHYSICS LETTERS, 2025, 126 (03)
  • [36] Researchers demonstrate quantum-dot lasers
    Messenger, HW
    LASER FOCUS WORLD, 1995, 31 (11): : 33 - 34
  • [37] Quantum-dot lasers fabricated with self-assembled microcrystals
    Mukai, K
    Nakata, Y
    Sugawara, M
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1998, 34 (02): : 223 - 234
  • [38] Quantum-dot lasers fabricated with self-assembled microcrystals
    Kyoto University, Japan
    不详
    不详
    不详
    不详
    不详
    不详
    不详
    Fujitsu Sci Tech J, 2 (223-234):
  • [39] Novel temperature characteristics of gain behaviors in quantum-dot lasers
    Ho, Y
    Wei-Chieh, T
    Lin, CF
    NUSOD '05: Proceedings of the 5th International Conference on Numerical Simulations of Optoelectronic Devices, 2004, : 93 - 94
  • [40] Self-assembled InAs quantum-dot chains on self-formed GaAs mesa-stripes by molecular beam epitaxy
    Kanto, T
    Yamaguchi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7690 - 7693