Epitaxial silicon carbide charge particle detectors

被引：67
|
作者：
Nava, F
Vanni, P
Lanzieri, C
Canali, C
机构：
[1] Univ Modena, Dipartimento Fis, I-41100 Modena, Italy
[2] Marconi SpA, Rome, Italy
[3] Univ Modena, Dipartimento Sci Ingn, I-41100 Modena, Italy
[4] INFM, Modena, Italy
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1999年 / 437卷 / 2-3期
关键词：
SiC; semiconductors; radiation; detectors;
D O I：
10.1016/S0168-9002(99)00756-1
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a Am-241 source in vacumn led to robust signals from the detectors. The collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：354 / 358
页数：5
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