Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures

被引：6
|
作者：
Piro, M. -C. [1 ,2 ]
Broniatowski, A. [1 ]
Marnieros, S. [1 ]
Dumoulin, L. [1 ]
Olivieri, E. [1 ]
机构：
[1] CNRS, IN2P3, Ctr Spectrometrie Nucl & Spectrometrie Masse, F-91405 Orsay, France
[2] CEA Saclay, F-91191 Gif Sur Yvette, France
来源：
JOURNAL OF LOW TEMPERATURE PHYSICS | 2014年 / 176卷 / 5-6期
关键词：
Dark matter; Cryogenic germanium detector; Hot carriers; Dopant impurities; Drift velocities; Neutral trap centers; IMPURITY SCATTERING; GE; ANISOTROPY;
D O I：
10.1007/s10909-014-1088-6
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new set of experimental data is presented for the mean drift lengths and the drift velocities of hot electrons and holes as a function of the electric field in ultra-pure and in lightly doped (n- and p-type) germanium single crystals at mK temperatures. Measurements are made in the field range between 0.1 and 15 V/cm, typical for the operation of cryogenic germanium detectors for dark matter search. The analysis of the experimental data strongly suggests that the dominant trapping centers are the dopant species in the neutral state.
引用
收藏
页码：796 / 801
页数：6
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