Reliability evaluation of Gilbert cell mixer based on a hot-carrier stressed device degradation model

被引：2
|
作者：
Lin, WC [1 ]
Du, LJ [1 ]
King, YC [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, STAR Grp, Microelect Lab, Hsinchu 300, Taiwan
来源：
2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年
关键词：
D O I：
10.1109/RFIC.2004.1320630
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive device degradation model is built for circuit-level reliability evaluation. A sub-circuit model describing the device degradation under hot-carrier stress is proposed. Combining with the original model predicting device characteristics change under FN stressing in our previous work, a complete device degradation model is presented with fairly good agreements with both DC and AC characteristics. Reliability of mixed-mode Gilbert Cell mixer is investigated and analyzed as well.
引用
收藏
页码：387 / 390
页数：4
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