Hole spin-flip transitions in a self-assembled quantum dot

被引:5
|
作者
Krzykowski, Mateusz [1 ]
Gawarecki, Krzysztof [1 ]
Machnikowski, Pawel [1 ]
机构
[1] Wroclaw Univ Sci & Technol, Dept Theoret Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
关键词
CONDUCTION-BAND; ZINCBLENDE SEMICONDUCTORS; VALENCE BANDS; RELAXATION; DEFORMATION; RESONANCES; ELECTRONS; GERMANIUM; GAAS; INSB;
D O I
10.1103/PhysRevB.102.205301
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we investigate hole spin-flip transitions in a single self-assembled InGaAs/GaAs quantum dot. We find the hole wave functions using the eight-band k . p model, and we calculate phonon-assisted spin relaxation rates for the ground-state Zeeman doublet. We systematically study the importance of various admixture and direct spin-phonon mechanisms giving rise to the transition rates. We show that the biaxial and shear strain constitute dominant spin-admixture coupling mechanisms. Then, we demonstrate that hole spin lifetime can be increased if a quantum dot is covered by a strain-reducing layer. Finally, we show that the spin relaxation can be described by an effective model.
引用
收藏
页数:8
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