Electrodeposition of In-S based buffer layers for high efficiency Cu(In, Ga)Se2 based solar cells

被引：2

作者：

Chassaing, E. ^{[1
]}

Naghavi, N. ^{[1
]}

Gallanti, S. ^{[1
]}

Renou, G. ^{[1
]}

Soro, M. ^{[1
]}

Bouttemy, M. ^{[2
]}

Etcheberry, A. ^{[2
]}

Lincot, D. ^{[1
]}

机构：

[1] UMR 7174 EDF CNRS Chim Paristech, IRDEP, Inst R&D Photovolta Energy, 6 Quai Watier, F-78401 Chatou, France

[2] CNRS, UVSQ, UMR 8180, ILV,Lavoisier Inst, F-78035 Versailles, France

来源：

PHOTOVOLTAICS FOR THE 21ST CENTURY 8 | 2013年 / 50卷 / 51期

关键词：

THIN-FILMS; INDIUM SULFIDE; ROUTE;

D O I：

10.1149/05051.0093ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Soft chemical processes such as screen printing, sol-gel, electrochemical or chemical bath-deposition, enable low cost and easily scalable processes for thin layer solar cells. For the CIGSe based solar cells, with the standard Mo/Cu(In, Ga)Se-2/CdS/i-ZnO/n(+)-ZnO structure, all layers of the p-n heterojunction and the transparent conductive oxide window can be grown by aqueous solution processes. In this work we focus on the electrochemical investigation of In-S layers. XPS analyses show the presence of both S and O. Conversion efficiencies of complete devices up to 14 % are obtained.

引用

页码：93 / 100

页数：8

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