Quantum dots and nanowires for optoelectronic device applications

被引：0

作者：

Gao, Q. ^{[1
]}

Kim, Y. ^{[1
]}

Joyce, H. J. ^{[1
]}

Lever, P. ^{[1
]}

Mokkapati, S. ^{[1
]}

Buda, M. ^{[1
]}

Tan, H. H. ^{[1
]}

Jagadish, C. ^{[1
]}

机构：

[1] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, GPO Box 4, Canberra, ACT 0200, Australia

来源：

ICTON 2006: 8TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, PROCEEDINGS: ESPC, NAON | 2006年

基金：

澳大利亚研究理事会;

关键词：

quantum dots; nanowire; lasers; selective area epitaxy; InGaAs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)13 substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper.

引用

页码：242 / +

页数：2

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