Glass-forming ability and cationic transport in gallium containing chalcohalide glasses

被引:34
|
作者
Tver'yanovich, YS [1 ]
Aleksandrov, VV [1 ]
Murin, IV [1 ]
Nedoshovenko, EG [1 ]
机构
[1] St Petersburg State Univ, Dept Chem, St Petersburg 198904, Russia
关键词
D O I
10.1016/S0022-3093(99)00327-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The glass formation regions are determined in the Ga2S3-GeS2-MCl (M = Li, Na, K, Cs, Ag, T1) and GaI3-NaCl systems. It is noted that the formation of complex structural units such as MGaS3/2Cl is favourable for increasing the glass-forming regions. Temperature dependencies of the electric conductivity of 60 samples in the system Ga2S3-GeS2-MCl were measured. All of these glasses have cation conductivity. Activation energy of conductivity for all investigated systems is a linear function on the cubic root of the atomic fraction of cations. These results correspond to the simple model of cation conductivity. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:237 / 241
页数:5
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