Supersymmetric structure of fractional quantum Hall effect in graphene

被引：0

作者：

Sahoo, S. ^{[1
]}

Das, S. ^{[1
]}

机构：

[1] Natl Inst Technol, Dept Phys, Durgapur 713209, W Bengal, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2009年 / 47卷 / 03期

关键词：

Supersymmetry; Fractional quantum Hall effect; Graphene; Landau levels; BERRYS PHASE; BILAYER; CARBON;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Graphene shows unusual low-energy electronic excitations described in terms of Dirac fermions. The Fractional quantum Hall effect in a bilayer graphene in different Landau levels within the supersymmetric formalism has been Studied. The quantized Hall conductivity is found to be sigma(xy) = +/- (n+1)v e(2)/h, where n = 0, 1, 2, 3 ...

引用

页码：186 / 191

页数：6

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