Characterization of porous silicon carbide according to absorption and photoluminescence spectra

被引：6

作者：

Berezovska, N. I. ^{[1
]}

Bacherikov, Yu. Yu. ^{[2
]}

Konakova, R. V. ^{[2
]}

Okhrimenko, O. B. ^{[2
]}

Lytvyn, O. S. ^{[2
]}

Linets, L. G. ^{[3
]}

Svetlichnyi, A. M. ^{[3
]}

机构：

[1] Kyiv Taras Shevchenko Natl Univ, Fac Phys, UA-01601 Kiyiv, Ukraine

[2] Natl Acad Sci Ukraine, Lashkarev Inst Semicond Phys, UA-03028 Kiev, Ukraine

[3] Southern Fed Univ, Taganrog Inst Technol, Taganrog 347928, Russia

来源：

SEMICONDUCTORS | 2014年 / 48卷 / 08期

关键词：

LUMINESCENCE; EMISSION; LAYERS;

D O I：

10.1134/S1063782614080041

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide (por-SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence signal from por-SiC at the excitation photon energy h nu(ex) a parts per thousand currency sign E (g) appears due to the formation of radiative centers associated with impurity atoms and surface defects produced upon anodic etching of the sample and subsequent treatment to uncover the pores.

引用

页码：1028 / 1030

页数：3

共 50 条

[41] Photoluminescence Spectra of Porous Silicon Modified by Copper Phthalocyanine Coating
Lukasiak, Zbigniew
Plociennik, Przemyslaw
Zawadzka, Anna
Korcala, Andrzej
Bartkiewicz, Krzysztof
2013 15TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON 2013), 2013,
[42] EXCITATION-SPECTRA OF THE VISIBLE PHOTOLUMINESCENCE OF ANODIZED POROUS SILICON
MOTOHIRO, T
KACHI, T
MIURA, F
TAKEDA, Y
HYODO, S
NODA, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (3A): : L207 - L209
[43] PHOTOLUMINESCENCE AND RAMAN-SCATTERING SPECTRA FROM POROUS SILICON
INOUE, K
MAEHASHI, K
NAKASHIMA, H
MATSUDA, O
MURASE, K
SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (01) : 77 - 80
[44] Photoluminescence Spectra of Post-heat-treated Porous Silicon
LIU Xiao bing
SemiconductorPhotonicsandTechnology, 2002, (04) : 234 - 237
[45] EVIDENCE OF HOMOGENEOUSLY BROADENED SPECTRA IN THE VISIBLE PHOTOLUMINESCENCE OF POROUS SILICON
KOYAMA, H
SHIMA, N
OZAKI, T
KOSHIDA, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (12B): : L1737 - L1739
[46] Comment on ''Resonantly excited photoluminescence spectra of porous silicon'' - Reply
Rosenbauer, M
Stutzmann, M
Finkbeiner, S
Weber, J
Bustarret, E
PHYSICAL REVIEW B, 1997, 55 (15): : 10117 - 10118
[47] Photoluminescence spectra of high temperature vacuum annealed porous silicon
Dimitrov, DB
Papadimitriou, D
Beshkov, G
1997 21ST INTERNATIONAL CONFERENCE ON MICROELECTRONICS - PROCEEDINGS, VOLS 1 AND 2, 1997, : 91 - 94
[48] Correlation between photoluminescence and positron annihilation spectra in porous silicon
Haung, CC
Chang, IM
Chen, YF
Tseng, PK
PHYSICA B-CONDENSED MATTER, 1998, 245 (01) : 9 - 14
[49] Photoluminescence Spectra of ZnO Thin Film Composed Nanoparticles on Silicon and Porous Silicon
Eswar, Kevin Alvin
Husairi, F. S.
Ab Aziz, Azlinda
Rusop, Mohamad
Abdullah, Saifollah
NANOSCIENCE, NANOTECHNOLOGY AND NANOENGINEERING, 2014, 832 : 843 - 847
[50] ABSORPTION SPECTRA OF EXCITON-IMPURITY COMPLEXES IN SILICON CARBIDE
GORBAN, IS
KROKHMAL, AP
RUDKO, SN
SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (02): : 312 - &

← 1 2 3 4 5 →