Photoluminescence of InAs quantum dots embedded in AlGaAs/InGaAs quantum wells with strain reducing layer

被引：2

作者：

Cisneros Tamayo, R. ^{[1
]}

Torchynska, T. V. ^{[2
]}

Polupan, G. ^{[1
]}

Guerrero Moreno, I. J. ^{[1
]}

Velazquez Lozada, E. ^{[1
]}

Shcherbyna, L. ^{[3
]}

机构：

[1] ESIME Inst Politecn Nacl, Mexico City 07738, DF, Mexico

[2] ESFM Inst Politecn Nacl, Mexico City 07738, DF, Mexico

[3] NASU, V Lashkarev Inst Semicond Phys, Kiev, Ukraine

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 71卷

关键词：

InAs quantum dots; Ga(Al)/In inter diffusion; Photoluminescence; InGaAlAs strain reducing layer; INALAS; LASERS;

D O I：

10.1016/j.spmi.2014.03.024

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence (PL) of InAs quantum dots (QDs) embedded in the Al0.30Ga0.70As/In0.15Ga0.85As/InGaAlAs/GaAs quantum wells (QWs) have been investigated in the temperature range of 10-500 K for as grown samples and after thermal annealing at 640 degrees C or 710 degrees C for two hours. QD samples with the different InAlGaAs capping layers (GaAs or Al0.1Ga0.75 In0.15As) have been studied. The higher PL intensity and lower energy of ground state (GS) emission are detected in the structure with Al0.1Ga0.75 In0.15As layer. This QD structure in as grown state has smaller PL thermal decay in comparison with this parameter in the structure with GaAs layer. The variation of PL intensities and peak positions at annealing are more essential in the QD structure with Al0.1Ga0.75 In0.15As capping layer, apparently, due to more efficient Ga(Al)/In intermixing. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：168 / 176

页数：9

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