Large-scale synthesis and photoluminescence properties of SiC networks

By using a novel and low-cost microwave method, three-dimensional SiC networks have been synthesized in large-scale. The composition and structural features of the product were characterized by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. The results show that the SiC networks consist of nanocable X-junction and Y-junction. Some nanocables are composed of 3C-SiC multicore encapsulated in single amorphous SiO2 shell. The SiC networks emitted stable violet-blue light around 380 nm under 325-nm excitation. Compared to the emission peak of the SiC networks after etched and the reported results of 3C-SiC nanowires, the emission peak of the SiC networks shows significant blueshift. The origin of the photoluminescence for the SiC networks could be due to two possible reasons: the central crystalline SiC nanowires and amorphous SiO2 shell. A two-step growth mechanism of the SiC networks was proposed based on the experimental characterizations. The successful synthesis of SiC networks is an important step in the development of SiC-based electronic devices and circuits.