Lowering of Effective Work Function Induced by Metal Carbide/HfO2 Interface Dipole for Advanced CMOS

被引：0

作者：

Mizubayashi, Wataru ^{[1
]}

Ota, Hiroyuki ^{[1
]}

Migita, Shinji ^{[1
]}

Morita, Yukinori ^{[1
]}

Endo, Kazuhiko ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

来源：

2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) | 2016年

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigated the origin of the voltage shift induced by metal carbide (MeC)/HfO2 interface as metal gates in a Si or Ge channel for advanced CMOS. In the MeC/HfO2 gate stacks, the oxidation reaction occurs at the MeC/HfO2 interface, inducing electron transfer from HfO2 to MeC, resulting in the generation of dipole at the MeC/HfO2 interface. It was found that the MeC/HfO2 interface dipole causes a negative voltage shift of about -0.4 V regardless of metal atoms. Thus, the effective work function of MeC in a metal/high-k gate stack structure can be lowered by the negative voltage shift induced by the MeC/HfO2 interface dipole.

引用

页码：123 / 126

页数：4

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