Chemical mechanical polishing of silver damascene structures

被引：14

作者：

Hauder, M ^{[1
]}

Gstöttner, J ^{[1
]}

Gao, L ^{[1
]}

Schmitt-Landsiedel, D ^{[1
]}

机构：

[1] Tech Univ Munich, LTE, Inst Tech Elect, D-80290 Munich, Germany

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 64卷 / 1-4期

关键词：

Ag metallization; sputtering; chemical mechanical polishing; sub micron;

D O I：

10.1016/S0167-9317(02)00772-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sub micron silver lines are patterned by applying chemical mechanical polishing (CMP). Dry etched SiO2 trenches are filled with Ag by sputtering before removing surplus Ag by several CMP methods. Techniques using a slurry which focus on mechanical polishing have a problem in achieving planar removal of the metal. But with mainly chemical polishing a homogenous removal with proper embedded lines is possible. Thermally robust and smooth Ag metallization lines are the result of such a process. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：73 / 79

页数：7

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